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INTEGRATED CIRCUITS
DATA SHEET
TZA3013A; TZA3013B SDH/SONET STM16/OC48 transimpedance amplifier
Product specification Supersedes data of 2000 Jun 19 File under Integrated Circuits, IC19 2001 Feb 26
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
FEATURES * Low equivalent input noise, typically 8 pA/Hz * Wide dynamic range, typically 6 A to 1.7 mA (p-p) * Differential transimpedance of 4 k * Bandwidth from DC to 1.9 GHz * Differential outputs * On-chip Automatic Gain Control (AGC) * No external components required * Single supply voltage 3.3 V * Bias voltage for PIN diode * Remains linear up to 1.7 mA (p-p) input current (unclipped) * Switched output polarity available (types A and B). ORDERING INFORMATION TYPE NUMBER TZA3013AU TZA3013BU PACKAGE NAME - - DESCRIPTION APPLICATIONS
TZA3013A; TZA3013B
* Digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high speed data networks * Wide-band RF gain block. GENERAL DESCRIPTION The TZA3013 is a transimpedance amplifier with AGC, designed to be used in STM16/OC48 fibre-optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage.
VERSION - -
bare die in waffle pack carriers; die dimensions 0.810 x 1.230 mm bare die in waffle pack carriers; die dimensions 0.810 x 1.230 mm
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
BLOCK DIAGRAM
TZA3013A; TZA3013B
handbook, full pagewidth
AGC
PILOT
VCC 15
100 pF
VCC 270 GAIN CONTROL
4
12
VCC PEAK DETECTOR 50 50 2 k
DREF 1
TZA3013AU
IN 2
14 13 6
OUTSENSE OUT OUTQ OUTQSENSE
low noise amplifier
2 k single-ended to differential converter
5
BIAS SOURCE 7, 8 GNDA 10 GNDD 3 INQ 9 TESTC 11 TESTD
MGT099
Fig.1 Block diagram of TZA3013AU (bare die only).
handbook, full pagewidth
AGC
PILOT
VCC 15
100 pF
VCC 270 GAIN CONTROL
4
12
VCC PEAK DETECTOR 50 50 2 k
DREF 1
TZA3013BU
IN 2
5 6 13
OUTSENSE OUT OUTQ OUTQSENSE
low noise amplifier
2 k single-ended to differential converter BIAS SOURCE
14
7, 8 GNDA
10 GNDD
3 INQ
9 TESTC
11 TESTD
MGU137
Fig.2 Block diagram of TZA3013BU (bare die only).
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
PINNING SYMBOL DREF IN INQ AGC OUTQSENSE OUTQ GNDA GNDA TESTC GNDD TESTD PILOT OUT OUTSENSE VCC Notes 1. DC bias voltage = 0.86 V. 2. This pad goes HIGH when current flows into pad IN. PAD TZA3013AU 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PAD TZA3013BU 1 2 3 4 14 13 7 8 9 10 11 12 6 5 15 TYPE analog output input input analog output analog output output ground ground input ground input analog output output analog output supply
TZA3013A; TZA3013B
DESCRIPTION bias voltage output for PIN diode; connect cathode of PIN diode to this pad current input; anode of PIN diode should be connected to this pad; note 1 decision level adjust input; note 1 AGC voltage data sense output for OUTQ; for test purposes data output; compliment of OUT analog ground analog ground test input; not used in the application digital ground test input; not used in the application pilot tone detection current output data output; compliment of OUTQ; note 2 data sense output for OUT; for test purposes supply voltage
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
FUNCTIONAL DESCRIPTION The TZA3013 is a transimpedance amplifier intended for use in fibre optic links for signal recovery in STM16/OC48 applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. The most important characteristics of the TZA3013 are high receiver sensitivity and wide dynamic range. High receiver sensitivity is achieved by minimizing transimpedance amplifier noise.
TZA3013A; TZA3013B
The TZA3013 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 6 A to 1.7 mA (p-p). This is implemented by an AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not required. A differential amplifier converts the output of the preamplifier to a differential voltage. The data output circuit is shown in Fig.3. The logic level symbol definitions are shown in Fig.4.
handbook, full pagewidth
VCC 50 2 k OUTSENSE OUT OUTQ 50 2 k OUTQSENSE
16
16
MGT102
Fig.3 Data output circuit.
handbook, full pagewidth
VCC VO(max) VOQH VOH Vo(p-p) VOQL VOL VO(min) VOO
MGR243
Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ.
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
PIN diode bias voltage DREF The performance of an optical receiver is largely determined by the combined effect of the transimpedance amplifier and the PIN diode. In particular, the method used to connect the PIN diode to the input and the layout around the input pad strongly influences the main parameters of a transimpedance amplifier, such as sensitivity, bandwidth, and PSRR. Sensitivity is most affected by the value of the total capacitance at the input pad. Therefore, to obtain the highest possible sensitivity requires the value of total capacitance to be as low as possible by reducing the capacitance of the PIN diode and the parasitics around the input pad. To minimize parasitics, the PIN diode should be placed as close as physically possible to the IC. The capacitance of the PIN diode can be reduced by making the value of reverse voltage across it as high as possible. The PIN diode can be connected to the input in two ways. Figure 5 shows the PIN diode connected between pads DREF and IN.
TZA3013A; TZA3013B
Pad DREF provides an easy bias voltage for the PIN diode. The voltage at DREF is derived from VCC by a low-pass filter comprising internal resistor R1 and external capacitor C2 which decouples any supply voltage noise. The value of external capacitor C2 affects the value of PSRR and should have a minimum value of 100 pF. Increasing this value increases the value of PSRR. For a supply voltage of 3.3 V, the reverse voltage across the PIN diode is 2.438 V (3.3 V - 0.862 V). It is preferable to connect the cathode of the PIN diode to a voltage higher than VCC if there is one available on the PCB, leaving pad DREF unconnected. If a negative supply voltage is available, the configuration shown in Fig.6 can be used. It should be noted that in this configuration, the direction of the signal current is reversed to that shown in Fig.5. It is essential that the PIN diode bias voltage is correctly filtered to achieve the highest possible level of sensitivity.
handbook, halfpage
VCC 30
handbook, halfpage
VCC 30 270
DREF 1 C2 100 pF Ii IN 2
R1 270
DREF 1
IN 2 Ii TZA3013
MGT103 MGU120
TZA3013 negative supply
Fig.5
The PIN diode connected between the input and pad DREF.
Fig.6
The PIN diode connected between the input and a negative supply voltage.
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
AGC The TZA3013 transimpedance amplifier can handle input currents from 6 A to 1.7 mA which is equivalent to a dynamic range of 49 dB. At low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. At high input currents however, the transimpedance should be low to avoid pulse width distortion. To achieve the wide dynamic range requires the gain of the amplifier to depend on the level of the input signal. This is achieved in the TZA3013 by an AGC loop. The AGC loop comprises a peak detector, a hold capacitor and a gain control circuit. The peak detector detects the amplitude of the signal and the hold capacitor stores it. The hold capacitor voltage is compared to a threshold voltage which corresponds to an input current of 50 A (p-p). The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level.
TZA3013A; TZA3013B
When the AGC is inactive, the transimpedance is at its maximum value of 4 k differential. When the AGC is active, the feedback resistor value of the transimpedance amplifier is reduced, reducing its transimpedance, to keep the output voltage constant. The transimpedance is regulated from 4 k at low currents (Ii < 50 A) to 80 at high currents (Ii = 1.7mA). The AGC allows the amplifier to remain linear over the whole input current range compared to other configurations which clip the large signals, such as those using Schottky diodes, for example. The top half of Fig.7 shows the output voltage at pads OUT and OUTQ (VOUT and VOUTQ) as a function of DC input current (II) at a supply voltage of 3.3 V. The bottom half of Fig.7 shows the difference between VOUT and VOUTQ. The output voltage changes linearly up to an input current of 50 A. At this point and above, the AGC becomes active and tries to keep the differential output voltage constant, which is about 220 mV for a large range input current of <1.7 mA.
handbook, full pagewidth V
3.2
MGT104
o (V)
3.1
VOUT
3.0
VCC = 3.3 V
2.9 VOUTQ 2.8 300 Vo(dif) (mV) 200
100
0 1 10
102
103
Ii (A)
104
Vo(dif) = VOUT - VOUTQ
Fig.7 AGC characteristics.
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC Vn supply voltage DC voltage pads IN and INQ pads OUT and OUTQ pads OUTSENSE and OUTQSENSE pad PILOT pad DREF In DC current pads IN and INQ pads OUT and OUTQ pad PILOT pad DREF Ptot Tstg Tj Tamb HANDLING total power dissipation storage temperature junction temperature ambient temperature PARAMETER
TZA3013A; TZA3013B
MIN. -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -4.0 -10 -0.2 -4.0 - -65 - -40
MAX. +3.8 +2.0 V V
UNIT
VCC + 0.5 V VCC + 0.5 V VCC + 0.5 V VCC + 0.5 V +4.0 +10 +0.2 +4.0 300 +150 150 +85 mA mA mA mA mW C C C
Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take normal precautions appropriate to handling MOS devices (see "Handling MOS devices"). CHARACTERISTICS Typical values at Tj = 25 C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified. SYMBOL VCC ICC Ptot Tj Tamb Rtr PARAMETER supply voltage supply current total power dissipation junction temperature ambient temperature small-signal transresistance measured differentially; of the receiver AC-coupled RL = RL = 50 f-3dB(h) In(tot)(rms) high frequency -3 dB point total integrated RMS noise current over bandwidth Ci = 0.5 pF referenced to input; fi = 1.8 GHz third-order Bessel filter; note 1 3.6 1.8 1.7 - 7 3.5 1.9 425 10 5.0 - - k k GHz nA AC-coupled; RL = 50 ; without input signal VCC = 3.3 V CONDITIONS - - -40 -40 MIN. 3.0 26 85.8 - +25 TYP. 3.3 MAX. 3.6 38 134 +125 +85 V mA mW C C UNIT
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
SYMBOL PSRR PARAMETER CONDITIONS MIN.
TZA3013A; TZA3013B
TYP.
MAX.
UNIT
power supply rejection ratio measured differentially; note 2 fi = 100 kHz to 100 MHz fi = 3 GHz - - - - referenced to input - 38 3.2 - - - - - A/V mA/V s s A
Automatic gain control loop: AGC tatt tdecay AGC attack time AGC decay time 10 10 50
Ith(AGC)(p-p) AGC threshold current (peak-to-peak value) Bias voltage: DREF RDREF resistance between DREF and VCC input current (peak-to-peak value) input bias voltage small-signal input resistance
tested at DC level
240
270
340
Inputs: IN and INQ Ii(p-p) VI(bias) Ri -1700 700 tested at 1 MHz; Ii < 20 A (p-p) AC-coupled; RL = 50 AC-coupled; RL = 50 ; Ii = 100 A (p-p) - - 860 53 +1700 1100 - A mV
Data outputs: OUT and OUTQ Vo(cm) Vo(se)(p-p) common mode output voltage single-ended load output voltage (peak-to-peak value) differential output offset voltage output resistance rise time fall time single-ended; DC tested 20% to 80% 80% to 20% VCC - 0.5 VCC - 0.25 VCC - 0.1 45 110 200 V mV
VOO Ro tr tf Notes
-100 40 - -
0 53 200 200
+100 65 - -
mV ps ps
1. Measurement performed with Ci = 0.5 pF comprising 0.4 pF (photodiode) and 0.1 pF (allowed for PCB layout). 2. PSRR is defined as the ratio of change in input current (Ii) corresponding to change in supply voltage (VCC): I i PSRR = -------------V CC For example, a 4 mV disturbance on VCC at 10 MHz will typically add an extra 120 nA to Ii (photodiode output current). The value of the external capacitor connected between pads DREF and GND has a significant effect on the value of PSRR. The specification is valid with an external capacitor of 1 nF.
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
TYPICAL PERFORMANCE CHARACTERISTICS
33 CC (mA) 31
MGT105
TZA3013A; TZA3013B
handbook, halfpage I
(1)
handbook, halfpage
31 ICC 29
MGT106
(mA)
29
(2)
27
27
25
25
(3)
23
23
21 -40
0
40
80
120 160 Tj (C)
21 3.0
3.2
3.4
VCC (V)
3.6
(1) VCC = 3.6 V. (2) VCC = 3.3 V. (3) VCC = 3.0 V.
Tj = 25 C.
Fig.8
Supply current as a function of the junction temperature.
Fig.9
Supply current as a function of the supply voltage.
handbook, halfpage
866
MGT107
handbook, halfpage V
VI(bias) (mV) 864
965 I(bias) (mV) 925
MGT108
885
862
845
805
860
765
(1) (2) (3)
858 3.0
3.2
3.4
VCC (V)
3.6
725 -40
0
40
80
120 160 Tj (C)
(1) VCC = 3.6 V. Tj = 25 C. (2) VCC = 3.3 V. (3) VCC = 3.0 V.
Fig.10 Input bias voltage as a function of the supply voltage.
Fig.11 Input bias voltage as a function of the junction temperature.
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
TZA3013A; TZA3013B
handbook, halfpage
290
MGT109
handbook, halfpage
340
MGT110
Vo(cm) (mV)
Vo(cm) (mV)
(1) (2)
(1)
270
300
250
(2)
260
230
220
210
(3)
190 3.0
3.2
3.4
VCC (V)
3.6
180 -40
0
40
80
120 160 Tj (C)
Tj = 25 C. (1) VCC - VOUT. (2) VCC - VOUTQ.
(1) VCC = 3.6 V. (2) VCC = 3.3 V. (3) VCC = 3.0 V.
Fig.12 Common mode output voltage as a function of the supply voltage referenced to VCC.
Fig.13 Common mode output voltage as a function of the junction temperature referenced to VCC.
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
APPLICATION AND TEST INFORMATION
TZA3013A; TZA3013B
handbook, full pagewidth
10 H 1 nF VCC 15 DREF 1 680 nF
VP
transmission line 13 OUT OUTQ Zo = 50 Zo = 50
100 nF
100 pF
TZA3013A
IN 6 2 7, 8, 10 GND
MGT112
100 nF R3 50 R4 50
Fig.14 Application diagram.
handbook, full pagewidth
NETWORK ANALYZER
S-PARAMETER TEST SET PORT 1 Zo = 50 PORT 2 Zo = 50
VCC 100 nF PATTERN GENERATOR 223-1 PRBS DATA 10 nF 330 R 60 OUT IN TZA3013 OUTQ GND 100 nF SAMPLING OSC 1 2 trigger input
223-1 PRBS CLOCK
Zo = 50
MGT113
Total impedance of the test circuit = ZT and is calculated by the equation Z T = s 21 x ( R + Z IN ) x 2 where s21 is the insertion loss of ports 1 and 2. Typical values: R = 330 , ZIN = 73 .
Fig.15 Test circuit.
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
BONDING PAD LOCATIONS
TZA3013A; TZA3013B
COORDINATES(1) SYMBOL DREF IN INQ AGC OUTQSENSE OUTQ GNDA GNDA TESTC GNDD TESTD PILOT OUT OUTSENSE VCC Note 1. All coordinates are referenced, in m, to the centre of the die. PAD TZA3013AU 1 2 3 4 5 - 6 - 7 8 9 10 11 12 13 - 14 - 15 PAD TZA3013BU x 1 2 3 4 - 14 - 13 7 8 9 10 11 12 - 6 - 5 15 -440 -440 -440 -266 -40 -40 +116 +110 +256 +398 +448 +448 +410 +260 +110 +116 -40 -40 -266 y +155 +10 -157 -255 -255 +255 -255 +255 -255 -255 -79 +70 +255 +255 +255 -255 +255 -255 +255
2001 Feb 26
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Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
TZA3013A; TZA3013B
handbook, halfpage
OUTQSENSE
handbook, halfpage
OUTSENSE
TESTD
PILOT
OUT
VCC
15 DREF 810 m IN INQ 1 2 3 4 x 0
14
13
12
11 15 10 GNDD TESTC 810 m DREF IN INQ 1 2 3 4 5 x 0 0 y 6 7 8 14 13 12 11 10 9 GNDD TESTC TZA3013BU
TZA3013AU
0 y 5 6 7 8
9
GNDA
OUTQSENSE
OUTQ
GNDA
AGC
AGC
OUT
GNDA
1230 m
MGT101
1230 m
MGT167
Fig.16 Bonding pad locations of the TZA3013AU.
Fig.17 Bonding pad locations of the TZA3013BU.
Physical characteristics of the bare die PARAMETER Glass passivation Bonding pad dimension VALUE 0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride minimum dimension of exposed metallization is 90 x 90 m (pad size = 100 x 100 m) except pads 2 and 3 which have exposed metallization of 80 x 80 m (pad size = 90 x 90 m) 2.8 m AlCu 380 m nominal 0.810 x 1.230 mm (0.996 mm2) silicon; electrically connected to GND potential through substrate contacts <440 C; recommended die attach is glue <15 s
Metallization Thickness Size Backing Attach temperature Attach time
2001 Feb 26
14
OUTSENSE
GNDA
TESTD
OUTQ
PILOT
VCC
Philips Semiconductors
Product specification
SDH/SONET STM16/OC48 transimpedance amplifier
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development
TZA3013A; TZA3013B
DEFINITIONS (1) This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. BARE DIE DISCLAIMER All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
2001 Feb 26
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Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A, Tel: +36 1 382 1700, Fax: +36 1 382 1800 India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 71
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/300/02/pp16
Date of release: 2001
Feb 26
Document order number:
9397 750 08038

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